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? e94106-te sony reserves the right to change products and specifications without prior notice. this information does not convey any license by any implication or otherwise under any patents or other right. application circuits shown, if any, are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits. description the ILX510 is a reduction type ccd linear sensor developed for high resolution copiers. this sensor reads a3-size documents at a density of 400 dpi, and a4-size documents at a density of 600 dpi at high speed. features number of effective pixels: 5150 pixels pixel size: 7 ? 7 ? (7 ? pitch) signal output phase of two-output simultaneous-output (alternate-output is available) ultra high sensitivity/ultra low lag max data rate: 40 mhz single 12 v power supply input clock pulse: cmos 5v drive package: 22 pin cer-dip (400 mil) absolute maximum ratings supply voltage vdd 15 v operating temperature ?0 to +60 ? storage temperature ?0 to +80 ? 5150-pixel ccd linear sensor (b/w) 20 pin dip (cer-dip) ILX510 aaa aaa aaa aaa aaa aaa aaa aaa output amplifer d25 d26 d74 s1 s2 s5149 s5150 d75 d94 gnd v dd f rs -even f lh -even f 2 -even f 1- even f rog v dd f 1 -odd gnd f lh -odd f rs -odd v dd f 2 -odd v out-odd v gg gnd v out-even output amplifer ccd analog shift register read out gate read out gate ccd analog shift register 13 14 17 18 21 19 2 3 20 22 4 5 6 8 9 10 11 12 frog pulse generator pin configuration (top view) 1 5150 v out-odd v dd f rs -odd f lh -odd nc gnd f 2 -odd f 1 -odd v dd v gg nc v out-even v dd f rs -even f lh -even nc nc f 2 -even f 1 -even f rog gnd gnd 1 2 3 4 5 6 7 8 9 10 11 12 22 21 20 19 18 17 16 15 14 13 block diagram
? ILX510 pin no symbol description pin no symbol description 1ncnc 12 f rog readout gate clock pulse input 2v gg output circuit gate bias 13 f 1- even clock pulse input (even pixel) 3v out-odd signal out (odd pixel) 14 f 2- even clock pulse input (even pixel) 4v dd 12 v power supply 15 nc nc 5 f rs- odd clock pulse input (odd pixel) 16 nc nc 6 f lh- odd clock pulse input (odd pixel) 17 f lh- even clock pulse input (even pixel) 7ncnc 18 f rs- even clock pulse input (even pixel) 8 gnd gnd 19 v dd 12 v power supply 9 f 2- odd clock pulse input (odd pixel) 20 v out-even signal out (even pixel) 10 f 1- odd clock pulse input (odd pixel) 21 gnd gnd 11 v dd 12 v power supply 22 gnd gnd pin description item min. typ. max. unit v dd 11.4 12 12.6 v item symbol min. typ. max. unit input capacity of f 1 * , f2 * c f 1, c f 2 400 pf input capacity of f lh * c f lh ?0pf input capacity of f rs * c f rs ?0pf input capacity of f rog c f rog ?0pf recommended supply voltage clock characteristics * it indicates that f 1- odd , f 1- even as f 1, f 2- odd , f 2- even as f 2, f lh- odd , f lh- even as f lh, f rs- odd , f rs- even as f rs. clock frequency input clock pulse voltage condition item symbol min. typ. max. unit f 1, f 2, f lh, f rs f f 1, f f 2,f f lh,f f rs 1 20 mhz data rate f f r 2 40 mhz item min. typ. max. unit f 1, f 2, f lh, f rs, f rog pulse voltage high level 4.75 5.0 5.25 v low level 0 0.1 v
? ILX510 note 1) in accordance with the given electrooptical characteristics, the even black level is defined as the average value of d6, d8 to d24. the odd black level is defined as the average value of d5, d7 to d23. 2) for the sensitivity test light is applied with a uniform intensity of illumination. 3) w lamp (2854 k). 4) prnu is defined as indicated below. ray incidence conditions are the same as for note 2. v out =500 mv (typ.) where the 5150 pixels are divided into blocks of 103, even and odd pixels, respectively. the maximum output of each block is set to v max , the minimum output to v min and the average output to v ave . 5) use below the minimum value of the saturation output voltage. 6) saturation exposure is defined as follows. 7) ri is defined as indicated below. v out =500 mv (typ.) where average of odd pixels output is set to v odd-ave , even pixels to v even-ave . item symbol min. typ. max. unit remarks sensitivity 1 r1 9 12 15 v/(lx s) note2 sensitivity 2 r2 27.4 v/(lx s) note3 sensitivity nonuniformity prnu 4 10 % note4 saturation output voltage v sat 1.0 1.5 v note5 saturation exposure se 0.067 0.125 lx s note6 register imbalance ri 2 7 % note7 dark voltage average v drk 0.3 2.0 mv note8 dark signal nonuniformity dsnu 0.6 3.0 mv note9 image lag il 0.02 % note10 supply current i vdd ?060ma total transfer efficiency tte 92 98 % output impedance z o 150 offset level v os 6.5 v note11 dynamic range dr 500 5000 note12 electrooptical characteristics (note 1) (ta = 25 ?, v dd = 12 v, data rate f f r =2 mhz, simultaneous output, input clock =5 vp-p light source = 3200 k, ir cut filter cm-500s (t = 1.0 mm) prnu = (v max ? v min )/2 100 (%) v ave se = v sat r1 v odd - ave ?v even - ave ri = ( v odd - ave + v even - ave ) 100 (%) 2
? ILX510 8) optical signal accumulated time t int stands at 10 ms. 9) the difference between the maximum and average values of the dark output voltage is calculated for even and odd respectivery. the larger value is defined as the dark signal nonuniformity. optical signal accumulated time t int stands at 10 ms. 10) v out = 500 mv (typ.) 11) vos is defined as indicated bellow. 12) dynamic range is defined as follows. when the optical signal accumulated time is shorter, the dynamic range gets wider because the optical signal accumulated time is in proportion to the dark voltage. aa v out v os gnd aa dr = v sat v drk
? ILX510 a a aa a aa a a a a a a a a aa aa a a aa aa a a 5 0 5 optical black (48 pixels) dummy signal (74 pixels) 1-line output period (5244 pixels) d69 d27 d25 d23 d5 d3 d1 d93 d81 d79 d77 d75 s5149 s5147 s5145 s3 s1 d73 d71 d83 d94 d72 d70 d28 d26 d24 d6 d4 d2 d74 s4 s2 s5150 s5148 s5146 d80 d78 d76 d82 d84 1 2 3 f rog 5 0 2622 0 5 0 f 1- even f lh- odd f lh- even f 1- odd f 2- odd f 2- even f rs- odd f rs- even v out-odd v out-even clock timing chart 1 (simultaneous output) note) the transfer pulses ( f 1, f 2, f lh) must have more than 2622 cycles.
? ILX510 aaaaaaaa aaaaaaaa aaa aaa t7 t5 t3 t2 t4 t6 t1 f 2 f 1 f lh f rog t6 t8 t12 t13 t9 t11 t10 t7 f 1 f lh f 2 f rs v out-odd v out-even t14 t15 t16 t17 clock timing chart 2 clock timing chart 3 clock timing of f 1, f 2, f lh, f rs, and v out at odd or even are the same as timing chart 3 in the case of alternate output.
? ILX510 f 1 5v f 2 0v f lh 5v f 2 0v cross point f 1 and f 2 cross point f lh and f 2 1.5v (min.) 1.5v (min.) 2.0v (min.) 0.5v (min.) clock timing chart 4
? ILX510 optical black (48 pixels) dummy signal (74 pixels) 1-line output period (5244 pixels) a aa a aa a a a a aa aa a a a a f 1- even f lh- even f rog 5 0 5 0 5 0 5 0 5 0 5 0 5 0 f 2- even f rs- odd f 2- odd f rs- even v out-odd v out-even d69 d27 d25 d23 d5 d3 d1 d93 d81 d79 d77 d75 s5149 s5147 s5145 s3 s1 d73 d71 d83 d94 d72 d70 d28 d26 d24 d6 d4 d2 d74 s4 s2 s5150 s5148 s5146 d80 d78 d76 d82 d84 1 2 3 2622 f 1- odd f lh- odd clock timing chart 5 (alternate output) note) the transfer pulses ( f 1, f 2, f lh) must have more than 2622 cycles. * alternate output is available by making f 1- even , f 2- even , f lh- even , f rs- even delayed to f 1- odd , f 2- odd , f lh- odd , f rs- odd for half a cycle.
? ILX510 symbol min. typ. max. unit f rog, f 1pulse timing t1 50 100 ns f rog pulse high level period t2 600 1000 ns f rog, f 1 pulse timing t3 400 1000 ns f rog pulse rise time t4 0 5 10 ns f rog pulse fall time t5 0 5 10 ns f 1 pulse rise time / f 2 pulse fall time t6 0 20 60 ns f 1 pulse fall time / f 2 pulse rise time t7 0 20 60 ns f rs pulse high level period t8 20 250 * ?s f rs, f lh pulse timing t9 0 250 * ?s f rs pulse rise time t10 0 10 30 ns f rs pulse fall time t11 0 10 30 ns signal output delay time t12 8 ns t13 8 ns f 1, f lh pulse low level period/ f 2 pulse high level period t14, t16 25 500 * ?s f 1, f lh pulse high level period/ f 2 pulse low level period t15, t17 25 500 * ?s clock pulse recommended timing ( * ) these timing is the recommended condition under f f 1=1 mhz.
?0 ILX510 v out-odd 12v 47f/16v 0.1f tr1 5.1k w 100 w 2 w nc v dd f rs -odd f lh -odd nc gnd f 2 -odd v out-odd f 1 -odd v gg v dd gnd gnd v out-even v dd f rs -even f lh -even nc nc f 2 -even f 1 -even f rog f 1 f lh f rs f 2 2 w 100 w 100 w 0.1f 100 w tr1 5.1k w v out-even f rog ic1 ic1 22 21 20 19 18 17 16 15 14 13 12 1 2 3 4 5 6 7 8 9 10 11 ic1 : 74ac04 tr1 : 2sc2785 application circuit * (inphase output) * data rate f f r = 2 mhz application circuits shown are typical examples illustrating the operation of the devices. sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party and other right due to same.
?1 ILX510 400 500 600 700 800 900 1000 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 0 14.3 28.6 42.9 57.1 71.4 0.1 60 0.5 1 5 10 010 20304050 1510 0.1 0.5 1 spectral sensitivity characteristics (standard characteristics) relative sensitivity wavelength (nm) mtf of main scanning direction (standard characteristics) spatial frequency (cycles/mm) mtf normalized spatial frequency dark signal output temperature characteristics (standard characteristics) output voltage rate integration time output voltage characteristics (standard characteristics) ta-ambient temperture (?) t int-integration time (ms) output voltage rate example of representative characteristics (v dd = 12 v, ta = 25 ?)
?2 ILX510 10 20 30 20 40 data rate f r (mhz) iv dd -supply current (ma) 6 8 10 12.0 12.6 11.4 v dd (v) v os -offset level (v) ta = 25? 4 2 0 6 8 10 30 50 10 ta-ambient temperature (?) 4 2 8 mv/? 20 40 60 0 operational frequency response of supply supply current (standard characteristics) offset level vs. v dd characteristics (standard characteristics) v os -offset level (v) offset level vs. temperature characteristics (standard characteristics) ta = 25? 0 ?.2 d v os d v dd ~ ~ d v os d ta
?3 ILX510 notes of handling 1) static charge prevention ccd image sensors are easily damaged by static discharge. before handling be sure to take the following protective measures. a) either handle bare handed or use non chargeable gloves, clothes or material. also use conductive shoes. b) when handling directly use an earth band. c) install a conductive mat on the floor or working table to prevent the generation of static electricity. d) ionized air is recommended for discharge when handling ccd image sensor. e) for the shipment of mounted substrates, use boxes treated for prevention of static charges. 2) notes on handling ccd cer-dip packages the following points should be observed when handling and installing cer-dip packages. a) remain within the following limits when applying static load to the ceramic portion of the package: (1) compressive strength: 39 n/surface (do not apply load more than 0.7 mm inside the outer perimeter of the glass portion.) (2) shearing strength: 29 n/surface (3) tensile strength: 29 n/surface (4) torsional strength: 0.9 nm b) in addition, if a load is applied to the entire surface by a hard component, bending stress may be generated and the package may fracture, etc., depending on the flatness of the ceramic portion. therefore, for installation, either use an elastic load, such as a spring plate, or an adhesive. c) be aware that any of the following can cause the glass to crack: because the upper and lower ceramic layers are shielded by low-melting glass, (1) applying repetitive bending stress to the external leads. (2) applying heat to the external leads for an extended period of time with soldering iron (3) rapid cooling or heating (4) rapid cooling or impact to a limited portion of the low-melting glass with a small-tipped tool such as tweezers. (5) prying the upper or lower ceramic layers away at a support point of the low-melting glass. note that the preceding notes should also be observed when removing a component from a board after it has already been soldered. 3) soldering a) make sure the package temperature does not exceed 80 ?. b) solder dipping in a mounting furnace causes damage to the glass and other defects. use a grounded 30 w soldering iron and solder each pin in less then 2 seconds. for repairs and remount, cool sufficiently. c) to dismount an imaging device, do not use a solder suction equipment. when using an electric desoldering tool, ground the controller. for the control system, use a zero cross type. upper ceramic layer lower ceramic layer low-melting glass 39n (1) 29n (2) 29n (3) 0.9nm (4)
?4 ILX510 4) dust and dirt protection a) operate in clean environments. b) do not either touch glass plates by hand or have any object come in contact with glass surfaces. should dirt stick to a glass surface, blow it off with an air blower. (for dirt stuck through static electricity ionized air is recommended.) c) clean with a cotton bud and ethyl alcohol if the glass surface is grease stained. be careful not to scratch the glass. d) keep in a case to protect from dust and dirt. to prevent dew condensation, preheat or precool when moving to a room with great temperature differences. 5) exposure to high temperatures or humidity will affect the characteristics. accordingly avoid storage or usage in such conditions. 6) ccd image sensors are precise optical equipment that should not be subject to mechanical shocks.
package structure 1. the height from the bottom to the sensor surface is 2.38 0.3mm. 2. the thickness of the cover glass is 0.8mm, and the refractive index is 1.5. 22pin dip (400mil) h v 55.7 0.5 11.12 0.5 36.05 (7m 5150pixels) 22 12 5.0 0.5 4.0 0.5 2.54 0.51 3.58 4.38 0.5 54.2 11 1 9.0 10.0 0.5 10.16 0?to 9 0.25 no.1 pixel 0.3 (at stand off) m package material lead treatment lead material package weight cer-dip tin plating 42 alloy 7.1g package outline unit : mm ILX510 ?5

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